Thermal treatment results in the formation of additional amorphous nanoclusters and in their crystallization with anneal temperature increasing. Nitride films annealed at 1200 °C contain crystalline Si clusters only. Characteristics of SiNx films.
При низкой оригинальности работы "Phase transformation in the annealed si-rich sinx films studied by raman scattering", Вы можете повысить уникальность этой работы до 80-100%
