Calculation of the concentration of defects on the doping level for the average cluster in n-Si. It is shown that the concentration of defects for the average cluster is in inverse proportion to the square of the radius of the cluster model Gossick"s.
При низкой оригинальности работы "Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz)", Вы можете повысить уникальность этой работы до 80-100%