Device, constructive – technological features, circuit of insert. Conditions of insert of the transistor. Static parameters. Physical processes. Differential coefficient of transmission of a current. Condition a splitting contact. Condition of saturation.
In the transistor alternate as an electrical conductivity three regions of a semiconductor, for what in a homogeneous semi-insulating substrate of silicon Si-i the methods of epiplanar technique shape regions of a collector, basis and emitter, (fig. On boundary region of emitter with base, and also on boundary of base region with collector are formed two electron-hole (p-n) junctions - emitter and collector (on a title of extreme regions of transistor structure). The region of the emitter should have higher electrical conductivity, than basis and collector. Depending on what electrode is common, distinguish three circuits of insert of the transistor: common-base (CB), common emitter (CE) and common collector (CC) (fig. The vacant electron sites injected by the emitter in basis and which have reached collector backswitched junction, get in its accelerating region and are thrown in region of a collector.
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